Parallel magnetotransport in multiple quantum well structures
نویسندگان
چکیده
منابع مشابه
Two-dimensional magnetotransport in a black phosphorus naked quantum well
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated to atomic layer thickness. Unlike metallic graphite and semi-metallic graphene, bP is a semiconductor in both bulk and few-layer form. Here we fabricate bP-naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from 6±1 nm t...
متن کاملTHz Photoresponse and Magnetotransport of detectors made of HgCdTe/HgTe quantum well structures
In addition to spaceand time-resolved measurements of the electrical generation of excited electrons in quantum Hall (QH) devices the dissipation in these devices induced by Terahertz (THz) laser impulses is investigated. For these tasks a THz laser system ( p-Ge-Laser [1]) is applied. This laser uses transitions between Landau levels of light holes and emits laser impulses with an adjustable d...
متن کاملTransport and magnetotransport properties of Mn-doped InxGa1 xAs/GaAs quantum well structures
We report on the transport, magnetotransport and magnetic properties of In0.17Ga0.83As quantum well in GaAs d-doped by Mn. At low temperatures, the anomalous Hall effect was observed which detects the spin-polarized carriers. Negative magnetoresistance was found at low temperatures, which became positive at high temperature. r 2005 Elsevier B.V. All rights reserved. PACS: 72.20. i; 75.50.Gg
متن کاملPolariton local states in periodic Bragg multiple-quantum-well structures.
We study analytically the optical properties of several types of defect in Bragg multiple-quantum-well structures. We show that a single defect leads to two local polariton modes in the photonic bandgap. These modes lead to peculiarities in reflection and transmission spectra. Detailed recommendations for experimental observation of the effects studied here are given.
متن کاملElectron–interface phonon interaction in multiple quantum well structures
Intersubband relaxation rates due to electron interactions with the interface phonons are evaluated for multiple quantum well structures designed for step quantum well lasers operating at mid-infrared to submillimetre wavelengths. The interface phonon modes and electron–phonon interaction Hamiltonians for the structures are derived using the transfer matrix method, based on the macroscopic diel...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Low Temperature Physics
سال: 2004
ISSN: 1063-777X,1090-6517
DOI: 10.1063/1.1819862